IRFF210 Spec and Replacement
Type Designator: IRFF210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20(max) nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO39
IRFF210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFF210 Specs
2n6784 irff210.pdf
PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET TRANSISTORS JANTXV2N6784 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5 2.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
2n6790 irff220.pdf
PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
2n6798 irff230.pdf
PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒
Detailed specifications: IRFE9130 , IRFE9210 , IRFE9220 , IRFE9230 , IRFF024 , IRFF110 , IRFF120 , IRFF130 , 2SK3878 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 , IRFF430 , IRFF9024 .
Keywords - IRFF210 MOSFET specs
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