IRFF210 Datasheet and Replacement
Type Designator: IRFF210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.2(max) nC
tr ⓘ - Rise Time: 20(max) nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO39
IRFF210 substitution
IRFF210 Datasheet (PDF)
2n6784 irff210.pdf

PD - 90424CIRFF210REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784HEXFETTRANSISTORS JANTXV2N6784THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF210 200V 1.5 2.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6790 irff220.pdf

PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6798 irff230.pdf

PD -90431CIRFF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798HEXFETTRANSISTORS JANTXV2N6798THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF230 200V 0.40 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing
Datasheet: IRFE9130 , IRFE9210 , IRFE9220 , IRFE9230 , IRFF024 , IRFF110 , IRFF120 , IRFF130 , SPP20N60C3 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 , IRFF430 , IRFF9024 .
Keywords - IRFF210 MOSFET datasheet
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IRFF210 equivalent finder
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