AP10TN135K PDF and Equivalents Search

 

AP10TN135K Specs and Replacement

Type Designator: AP10TN135K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT223

AP10TN135K substitution

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AP10TN135K datasheet

 ..1. Size:141K  ape
ap10tn135k.pdf pdf_icon

AP10TN135K

AP10TN135K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 135m Fast Switching Characteristic ID 3A G Halogen Free & RoHS Compliant Product S Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve ... See More ⇒

 5.1. Size:201K  ape
ap10tn135h.pdf pdf_icon

AP10TN135K

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology... See More ⇒

 5.2. Size:222K  ape
ap10tn135m.pdf pdf_icon

AP10TN135K

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t... See More ⇒

 5.3. Size:166K  ape
ap10tn135j.pdf pdf_icon

AP10TN135K

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve... See More ⇒

Detailed specifications: AP9938GEM, AP9960GM, AP9962AGM, AP9971AGM, AP9971GM, AP9975GM, AP9970GK, AP09T10GK, IRF3205, AP30T10GK, AP60WN4K9K, AP6N090K, AP6N090LK, AP6P250K, AP04N20GK, APA2N70K, AP18P10GK

Keywords - AP10TN135K MOSFET specs

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