AP10TN135K - описание и поиск аналогов

 

AP10TN135K. Аналоги и основные параметры

Наименование производителя: AP10TN135K

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.78 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm

Тип корпуса: SOT223

Аналог (замена) для AP10TN135K

- подборⓘ MOSFET транзистора по параметрам

 

AP10TN135K даташит

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ap10tn135k.pdfpdf_icon

AP10TN135K

AP10TN135K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 135m Fast Switching Characteristic ID 3A G Halogen Free & RoHS Compliant Product S Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve

 5.1. Size:201K  ape
ap10tn135h.pdfpdf_icon

AP10TN135K

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 5.2. Size:222K  ape
ap10tn135m.pdfpdf_icon

AP10TN135K

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t

 5.3. Size:166K  ape
ap10tn135j.pdfpdf_icon

AP10TN135K

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve

Другие MOSFET... AP9938GEM , AP9960GM , AP9962AGM , AP9971AGM , AP9971GM , AP9975GM , AP9970GK , AP09T10GK , IRF3205 , AP30T10GK , AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK .

History: SGSP479

 

 

 

 

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