All MOSFET. AP6P250K Datasheet

 

AP6P250K Datasheet and Replacement


   Type Designator: AP6P250K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT223
 

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AP6P250K Datasheet (PDF)

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AP6P250K

AP6P250KHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Lower Gate Charge RDS(ON) 250mS Fast Switching Characteristic ID -2.4AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP6P250 series are from Advanced Power innovated design andsilicon process technology to achi

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AP6P250K

AP6P250NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID -1.6AS RoHS Compliant & Halogen-FreeSOT-23S GDDescriptionAP6P250N series are from Advanced Power innovated designand silicon process technology to achieve the

Datasheet: AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , AP30T10GK , AP60WN4K9K , AP6N090K , AP6N090LK , IRF540N , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , AP10P500N , AP10TN135N , AP2302AGN , AP2304AGN .

History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F

Keywords - AP6P250K MOSFET datasheet

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