AP2N025LN MOSFET Datasheet: N-Ch, 20V, 5.7A. Full specification with pinout and replacement list

AP2N025LN Specs and Replacement

Type Designator: AP2N025LN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23S

AP2N025LN substitution

- MOSFET ⓘ Cross-Reference Search

AP2N025LN datasheet

..1. Size:189K ape
ap2n025ln.pdf pdf_icon

AP2N025LN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 25m Surface Mount Package ID3 5.7A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N025L series are from Advanced Power innovated design and silicon process technology to achieve the l... See More ⇒

9.1. Size:189K ape
ap2n075en.pdf pdf_icon

AP2N075EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N075E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

9.2. Size:132K ape
ap2n050g.pdf pdf_icon

AP2N050G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP2N050 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

9.3. Size:210K ape
ap2n030ey.pdf pdf_icon

AP2N030EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 34m D Fast Switching Performance ID3 6.3A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology ... See More ⇒