All MOSFET. AP2N025LN Datasheet

 

AP2N025LN MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2N025LN
   Marking Code: A25SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23S

 AP2N025LN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2N025LN Datasheet (PDF)

 ..1. Size:189K  ape
 ap2n025ln.pdf

AP2N025LN AP2N025LN

AP2N025LNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 25m Surface Mount Package ID3 5.7AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N025L series are from Advanced Power innovated design andsilicon process technology to achieve the l

 9.1. Size:189K  ape
 ap2n075en.pdf

AP2N025LN AP2N025LN

AP2N075ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N075E series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.2. Size:132K  ape
 ap2n050g.pdf

AP2N025LN AP2N025LN

AP2N050GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP2N050 series are from Advanced Power innovated design andsilicon process technology to achieve th

 9.3. Size:210K  ape
 ap2n030ey.pdf

AP2N025LN AP2N025LN

AP2N030EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 34mD Fast Switching Performance ID3 6.3AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology

 9.4. Size:189K  ape
 ap2n030en.pdf

AP2N025LN AP2N025LN

AP2N030ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 5.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.5. Size:65K  ape
 ap2n050h.pdf

AP2N025LN AP2N025LN

AP2N050HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 50m Fast Switching Characteristic ID 14.8AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP2N050series arefrom Advanced Power innovated

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History: HUF76423D3

 

 
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