All MOSFET. AP3601N Datasheet

 

AP3601N Datasheet and Replacement


   Type Designator: AP3601N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: SOT23S
 

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AP3601N Datasheet (PDF)

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AP3601N

AP3601NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 95m Surface Mount Device ID -2.9AS RoHS Compliant & Halogen-FreeSOT-23S GDDescriptionAP3601 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

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AP3601N

AP36016MHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Characteristic ID -8.7AG2S2 RoHS Compliant & Halogen-FreeG1SO-8 S1DescriptionAP36016 series are from Advanced Power innovated design and siliconD2D1p

Datasheet: AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N , AP2P053N , 8205A , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N , AP2301EN .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV

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