AP3601N MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3601N
Marking Code: A01SS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SOT23S
AP3601N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3601N Datasheet (PDF)
ap3601n.pdf
AP3601NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 95m Surface Mount Device ID -2.9AS RoHS Compliant & Halogen-FreeSOT-23S GDDescriptionAP3601 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap36016m.pdf
AP36016MHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Characteristic ID -8.7AG2S2 RoHS Compliant & Halogen-FreeG1SO-8 S1DescriptionAP36016 series are from Advanced Power innovated design and siliconD2D1p
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