All MOSFET. AP3P080N Datasheet

 

AP3P080N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3P080N
   Marking Code: A10SS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23S

 AP3P080N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3P080N Datasheet (PDF)

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