AP3P080N Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3P080N
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 85 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: SOT23S
Аналог (замена) для AP3P080N
AP3P080N Datasheet (PDF)
ap3p080n.pdf

AP3P080NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P080 series are from Advanced Power innovated designand silicon process technology to achieve the
ap3p050h.pdf

AP3P050HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50mG Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-FreeSDescriptionAP3P050 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
ap3p010yt.pdf

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,
ap3p010amt.pdf

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev
Другие MOSFET... AP2N030EN , AP2N075EN , AP2P052N , AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , IRFB3607 , AP3P090N , AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN .
History: HGN093N12S | FQPF5N50CYDTU | IRFS9N60APBF
History: HGN093N12S | FQPF5N50CYDTU | IRFS9N60APBF



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