AP15TP1R0Y
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP15TP1R0Y
Marking Code: Z03SS
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 33
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
SOT26
AP15TP1R0Y
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP15TP1R0Y
Datasheet (PDF)
..1. Size:213K ape
ap15tp1r0y.pdf 
AP15TP1R0YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic S BVDSS -150VD Lower Gate Charge D RDS(ON) 1 Small Footprint & Low Profile Package ID3 -1AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP15TP1R0 series are from Advanced Power innovated design andsilicon process t
0.1. Size:159K ape
ap15tp1r0yt.pdf
AP15TP1R0YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -150V Small Size & Lower Profile RDS(ON) 1 RoHS Compliant & Halogen-Free ID3 -1.2AGSDDDescriptionDAP15TP1R0 series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible on
5.1. Size:186K ape
ap15tp1r0m.pdf
AP15TP1R0MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -150VDDD Lower Gate Charge RDS(ON) 1D Fast Switching Characteristic ID -1.1AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP15TP1R0 series are from Advanced Power innovateddesign and silicon process technol
9.1. Size:188K ape
ap15tn1r5n.pdf
AP15TN1R5NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 150VD Fast Switching Characteristic RDS(ON) 1.5 Low Gate Charge ID 0.6AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP15TN1R5 series are from Advanced Power innovated designand silicon process technology to achieve
9.2. Size:166K ape
ap15t15gm.pdf
AP15T15GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150VDDD Simple Drive Requirement RDS(ON) 150mD Surface Mount Package ID 2.6AGS RoHS Compliant & Halogen-Free SSSO-8DDescriptionAP15T15 series are from Advanc
9.3. Size:94K ape
ap15t15gh-hf.pdf
AP15T15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 150m Fast Switching Characteristic ID 11.2AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast
9.4. Size:93K ape
ap15t15gm-hf.pdf
AP15T15GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150VDDD Simple Drive Requirement RDS(ON) 150mD Surface Mount Package ID 2.6AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast sw
9.5. Size:57K ape
ap15t20gh-hf.pdf
AP15T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas
9.6. Size:102K ape
ap15t03gj.pdf
AP15T03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLower Gate Charge BVDSS 30V DSimple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 12A GSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial
9.7. Size:57K ape
ap15t20gs-hf.pdf
AP15T20GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedi
9.8. Size:59K ape
ap15t20gi-hf.pdf
AP15T20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-FreeGSDescriptionAP15T20 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
9.9. Size:233K ape
ap15t15gh.pdf
AP15T15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 150m Fast Switching Characteristic ID 11.2AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSthe best combination of fast
9.10. Size:58K ape
ap15t25h-hf.pdf
AP15T25H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 250VD Lower Gate Charge RDS(ON) 320m Fast Switching Characteristics ID 8.7A RoHS Compliant & Halogen-FreeGSDescriptionGAP15T25 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology
9.11. Size:116K ape
ap15t20agh-hf.pdf
AP15T20AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fa
9.12. Size:94K ape
ap15t15gi-hf.pdf
AP15T15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 150VD Lower Gate Charge RDS(ON) 150m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grug
9.13. Size:402K ncepower
nceap15t14.pdf
http://www.ncepower.com NCEAP15T14NCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
9.14. Size:695K ncepower
nceap15t14d.pdf
http://www.ncepower.com NCEAP15T14DNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
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