All MOSFET. AP2N030EY Datasheet

 

AP2N030EY Datasheet and Replacement


   Type Designator: AP2N030EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT26
 

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AP2N030EY Datasheet (PDF)

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AP2N030EY

AP2N030EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 34mD Fast Switching Performance ID3 6.3AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology

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AP2N030EY

AP2N030ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 5.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology to achiev

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 ap2n075en.pdf pdf_icon

AP2N030EY

AP2N075ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N075E series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.2. Size:132K  ape
 ap2n050g.pdf pdf_icon

AP2N030EY

AP2N050GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP2N050 series are from Advanced Power innovated design andsilicon process technology to achieve th

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Datasheet: AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AO4407 , AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y .

History: WSD3028DN | HX3400A | UPA1725G | WSD30140DN56 | 2SK1029 | SM2323PSA | 2SK4081D

Keywords - AP2N030EY MOSFET datasheet

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