AP2N030EY PDF and Equivalents Search

 

AP2N030EY Specs and Replacement

Type Designator: AP2N030EY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT26

AP2N030EY substitution

- MOSFET ⓘ Cross-Reference Search

 

AP2N030EY datasheet

 ..1. Size:210K  ape
ap2n030ey.pdf pdf_icon

AP2N030EY

AP2N030EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 34m D Fast Switching Performance ID3 6.3A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology ... See More ⇒

 6.1. Size:189K  ape
ap2n030en.pdf pdf_icon

AP2N030EY

AP2N030EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 5.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.1. Size:189K  ape
ap2n075en.pdf pdf_icon

AP2N030EY

AP2N075EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N075E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.2. Size:132K  ape
ap2n050g.pdf pdf_icon

AP2N030EY

AP2N050G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP2N050 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

Detailed specifications: AP2320GN, AP6N2K0EN, AP2308GEN, AP2318BEN, AP15TP1R0Y, AP2604GY, AP2615GEY, AP2617GY, AO4407, AP2P052Y, AP3N028EY, AP6N090Y, AP2906EY, AP2626GY, AP2530GY, AP2530AGY, AP4C205Y

Keywords - AP2N030EY MOSFET specs

 AP2N030EY cross reference

 AP2N030EY equivalent finder

 AP2N030EY pdf lookup

 AP2N030EY substitution

 AP2N030EY replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.