All MOSFET. AP2906EY Datasheet

 

AP2906EY Datasheet and Replacement


   Type Designator: AP2906EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT26
 

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AP2906EY Datasheet (PDF)

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AP2906EY

AP2906EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Lower Gate Charge BVDSS 20VD1/D2G1 Capable of 2.5V Gate Drive RDS(ON) 35mS2 Surface mount package ID3 4.7AD1/D2S1SOT-26 RoHS Compliant & Halogen-FreeD1/D2DescriptionAP2906 series are from Advanced Power innovatedG1 G2design and silicon process

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AP2906EY

AP2904EC4Halogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-FreeDescriptionAP2904 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

Datasheet: AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y , P0903BDG , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY , AP1332GEU .

History: IRFZ48L | UPA1764G | NVD6828NL | AOU3N50 | SE4606 | SSM6J06FU | 6N60KG-TA3-T

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