All MOSFET. AP2906EY Datasheet

 

AP2906EY Datasheet and Replacement


   Type Designator: AP2906EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT26
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AP2906EY Datasheet (PDF)

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AP2906EY

AP2906EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Lower Gate Charge BVDSS 20VD1/D2G1 Capable of 2.5V Gate Drive RDS(ON) 35mS2 Surface mount package ID3 4.7AD1/D2S1SOT-26 RoHS Compliant & Halogen-FreeD1/D2DescriptionAP2906 series are from Advanced Power innovatedG1 G2design and silicon process

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AP2906EY

AP2904EC4Halogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-FreeDescriptionAP2904 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MGSF1N03LT1G | 2SK1496-Z | AP3P7R0EMT | PV537BA | 12N80L-TF3-T | GSM3452 | PDC2603Z

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