AP2N7002KU MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2N7002KU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT323
AP2N7002KU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2N7002KU Datasheet (PDF)
ap2n7002ku.pdf
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AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th
ap2n7002k-hf.pdf
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AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist
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