IRFF9130 Datasheet and Replacement
Type Designator: IRFF9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140(max) nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO39
IRFF9130 substitution
IRFF9130 Datasheet (PDF)
2n6849 irff9130.pdf

PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
irff9110.pdf

PD - 90388REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9110100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
2n6845 irff9120.pdf

PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce
Datasheet: IRFF310 , IRFF320 , IRFF330 , IRFF420 , IRFF430 , IRFF9024 , IRFF9110 , IRFF9120 , SPP20N60C3 , IRFF9210 , IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 .
History: AP4413GM-HF
Keywords - IRFF9130 MOSFET datasheet
IRFF9130 cross reference
IRFF9130 equivalent finder
IRFF9130 lookup
IRFF9130 substitution
IRFF9130 replacement
History: AP4413GM-HF



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