IRFF9130 MOSFET PDF: P-Ch, 100V, 6.5A. Full specification with pinout and replacement list

IRFF9130 PDF Specs and Replacement

   Type Designator: IRFF9130
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 140(max) nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO39

IRFF9130 substitution

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IRFF9130 PDF Specs

..1. Size:133K international rectifier
2n6849 irff9130.pdf pdf_icon

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an... See More ⇒

..2. Size:682K njs
irff9130 irff9131 irff9132 irff9133.pdf pdf_icon

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8.1. Size:132K international rectifier
irff9110.pdf pdf_icon

PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desi... See More ⇒

8.2. Size:130K international rectifier
2n6845 irff9120.pdf pdf_icon

PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proce... See More ⇒