All MOSFET. AP80WN2K5I Datasheet

 

AP80WN2K5I Datasheet and Replacement


   Type Designator: AP80WN2K5I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

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AP80WN2K5I Datasheet (PDF)

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AP80WN2K5I

AP80WN2K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 800VD Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP80WN2K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

Datasheet: AP8N4R2MT , AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , 10N60 , AP80SL990BJB , AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI .

History: IPA80R900P7 | APT60M80JVR | APT60M60JLL | TPY65R1K5MB | APT60M75JLL | CJAA3134K | AP09N20BGI-HF

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