AP80WN2K5I PDF and Equivalents Search

 

AP80WN2K5I Specs and Replacement

Type Designator: AP80WN2K5I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F

AP80WN2K5I substitution

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AP80WN2K5I datasheet

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AP80WN2K5I

AP80WN2K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 800V D Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP80WN2K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re... See More ⇒

Detailed specifications: AP8N4R2MT, AP8N3R5CMT, AP8604CDT, AP8600S, AP8600P, AP8600MT-L, AP8600MT, AP85T10AGP, IRFP260N, AP80SL990BJB, AP80SL990BI, AP80SL990BH, AP80SL650AI, AP80SL400DI, AP80SL400AS, AP80SL400AP, AP80SL400AI

Keywords - AP80WN2K5I MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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