AP80WN2K5I Datasheet and Replacement
Type Designator: AP80WN2K5I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27 nC
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
AP80WN2K5I substitution
AP80WN2K5I Datasheet (PDF)
ap80wn2k5i.pdf
AP80WN2K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 800VD Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP80WN2K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
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