IRFF9210 Datasheet. Specs and Replacement
Type Designator: IRFF9210 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 max nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO39
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IRFF9210 substitution
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IRFF9210 datasheet
irff9210.pdf
PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9210 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9210 -200V 3.0 -1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒
2n6851 irff9230.pdf
PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry... See More ⇒
2n6847 irff9220.pdf
PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
Detailed specifications: IRFF320, IRFF330, IRFF420, IRFF430, IRFF9024, IRFF9110, IRFF9120, IRFF9130, K4145, IRFF9220, IRFF9230, IRFI1010N, IRFI1310N, IRFI3205, IRFI3710, IRFI460, IRFI4905
Keywords - IRFF9210 MOSFET specs
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