AP76T03AGMT Datasheet and Replacement
Type Designator: AP76T03AGMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: PMPAK5X6
AP76T03AGMT substitution
AP76T03AGMT Datasheet (PDF)
ap76t03agmt.pdf

AP76T03AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 7.2m Low On-resistance ID 55AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP76T03A series are from Advanced Power innovated design andsilicon process technology to ach
ap76t03agmt-hf.pdf

AP76T03AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 7.2m Low On-resistance ID 55AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP76T03A series are from Advanced Power innovated design andsilicon process technology to ach
Datasheet: AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI , AP78T10GP , AON7408 , AP75T12GI , AP70WN2K8L , AP70WN2K8I , AP70WN2K8H , AP70WN1K5P , AP70WN1K5I , AP70SL950AJB , AP70SL950AJ .
History: PSMN2R8-40BS | 2SK2985 | RU30230R | 2SK1959 | 2N3368 | IRF5851TR | STP62NS04Z
Keywords - AP76T03AGMT MOSFET datasheet
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History: PSMN2R8-40BS | 2SK2985 | RU30230R | 2SK1959 | 2N3368 | IRF5851TR | STP62NS04Z



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