IRFF9230
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFF9230
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34.8(max)
nC
trⓘ - Rise Time: 100(max)
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO39
IRFF9230
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFF9230
Datasheet (PDF)
..1. Size:131K international rectifier
2n6851 irff9230.pdf 
PD - 90551DIRFF9230 JANTX2N6851REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851HEXFETTRANSISTORS JANS2N6851THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry
8.1. Size:130K international rectifier
irff9210.pdf
PD - 90382REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9210200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9210 -200V 3.0 -1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
8.2. Size:130K international rectifier
2n6847 irff9220.pdf
PD - 90553CIRFF9220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847HEXFETTRANSISTORS JANTXV2N6847THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9220 -200V 1.5 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
9.1. Size:135K international rectifier
irff9024.pdf
PD -90413REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF902460V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9024 -60V 0.28 -6.4AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design
9.2. Size:132K international rectifier
irff9110.pdf
PD - 90388REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9110100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
9.3. Size:133K international rectifier
2n6849 irff9130.pdf
PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
9.4. Size:130K international rectifier
2n6845 irff9120.pdf
PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce
Datasheet: IRFF420
, IRFF430
, IRFF9024
, IRFF9110
, IRFF9120
, IRFF9130
, IRFF9210
, IRFF9220
, RFP50N06
, IRFI1010N
, IRFI1310N
, IRFI3205
, IRFI3710
, IRFI460
, IRFI4905
, IRFI510A
, IRFI520A
.
