AP70PN1R1I MOSFET Datasheet: N-Ch, 700V, 7A. Full specification with pinout and replacement list

AP70PN1R1I Specs and Replacement

Type Designator: AP70PN1R1I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 64 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220F

AP70PN1R1I substitution

- MOSFET ⓘ Cross-Reference Search

AP70PN1R1I datasheet

..1. Size:176K ape
ap70pn1r1i.pdf pdf_icon

AP70PN1R1I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description AP70PN1R1 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

9.1. Size:1952K allpower
ap70p03k.pdf pdf_icon

... See More ⇒

9.2. Size:1663K cn apm
ap70p03d.pdf pdf_icon

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

9.3. Size:1611K cn apm
ap70p03nf.pdf pdf_icon

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒