All MOSFET. AP70PN1R1I Datasheet

 

AP70PN1R1I Datasheet and Replacement


   Type Designator: AP70PN1R1I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

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AP70PN1R1I Datasheet (PDF)

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AP70PN1R1I

AP70PN1R1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP70PN1R1 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

Datasheet: AP70SL380AH , AP70SL250AS , AP70SL250AI , AP70SL1K4BJB , AP70SL1K4BH , AP70SL1K4AJB , AP70SL1K4AI , AP70SL1K4AH , IRLB4132 , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J .

History: VBC7P2216 | PHD18NQ10T | TSM2314CX | SM6011NSF | IXFT30N40Q | H02N60SI | PV606BA

Keywords - AP70PN1R1I MOSFET datasheet

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