AP70PN1R1I - аналоги, даташиты, параметры транзистора

AP70PN1R1I Datasheet (PDF)

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AP70PN1R1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP70PN1R1 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

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AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

9.2. Size:1611K cn apm
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AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

9.3. Size:1495K cn apm
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AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS DR