All MOSFET. AP6N4R2P Datasheet

 

AP6N4R2P Datasheet and Replacement


   Type Designator: AP6N4R2P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 2250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

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AP6N4R2P Datasheet (PDF)

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AP6N4R2P

AP6N4R2PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 4.2m Fast Switching Characteristic ID 115AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N4R2 seriesare fromAdvanced Power innovated d

 8.1. Size:219K  ape
 ap6n4r0i.pdf pdf_icon

AP6N4R2P

AP6N4R0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.99m Lower On-resistance ID4 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N4R0 seriesare fromAdvanced Power innovated designan

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 ap6n40d.pdf pdf_icon

AP6N4R2P

AP6N40D 400V N-Channel Enhancement Mode MOSFET Description The AP6N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Datasheet: AP6P025H , AP6N8R2LMT , AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I , AP6N6R5H , IRFZ24N , AP6N4R0I , AP6N3R8H , AP6N3R7MT-L , AP6N3R7MT , AP6N3R5S , AP6N3R5P , AP6N3R5LIN , AP6N3R5LI .

Keywords - AP6N4R2P MOSFET datasheet

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