AP6N1R7CDT Datasheet and Replacement
Type Designator: AP6N1R7CDT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 4550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: PDFN5X6
AP6N1R7CDT substitution
AP6N1R7CDT Datasheet (PDF)
ap6n1r7cdt.pdf

AP6N1R7CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP6N1R7C series are from Advanced Power innovated designand silicon process technology to achieve the l
ap6n100h.pdf

AP6N100HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N100 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to a
ap6n100jv.pdf

AP6N100JVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP6N100 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
Datasheet: AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , 2SK3918 , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT .
History: HSST3139 | NTMFD4C87N | UTM4052L-S08-R | SUD50N04-05L | 2SK2050 | AFN4172S | SI1308EDL
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History: HSST3139 | NTMFD4C87N | UTM4052L-S08-R | SUD50N04-05L | 2SK2050 | AFN4172S | SI1308EDL



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