AP6N1R7CDT MOSFET. Datasheet pdf. Equivalent
Type Designator: AP6N1R7CDT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 44.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 129 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 4550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: PDFN5X6
AP6N1R7CDT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP6N1R7CDT Datasheet (PDF)
ap6n1r7cdt.pdf
AP6N1R7CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP6N1R7C series are from Advanced Power innovated designand silicon process technology to achieve the l
ap6n100h.pdf
AP6N100HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N100 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to a
ap6n100jv.pdf
AP6N100JVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP6N100 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HCT80R850 | HCP65R110
History: HCT80R850 | HCP65R110
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918