All MOSFET. AP6N1R7CDT Datasheet

 

AP6N1R7CDT Datasheet and Replacement


   Type Designator: AP6N1R7CDT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 4550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: PDFN5X6
 

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AP6N1R7CDT Datasheet (PDF)

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 ap6n1r7cdt.pdf pdf_icon

AP6N1R7CDT

AP6N1R7CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP6N1R7C series are from Advanced Power innovated designand silicon process technology to achieve the l

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 ap6n100h.pdf pdf_icon

AP6N1R7CDT

AP6N100HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N100 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to a

 9.2. Size:177K  ape
 ap6n100jv.pdf pdf_icon

AP6N1R7CDT

AP6N100JVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP6N100 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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 ap6n12mi.pdf pdf_icon

AP6N1R7CDT

AP6N12MI 120V N-Channel Enhancement Mode MOSFET Description The AP6N12MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =6A DS D R

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Datasheet: AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , EMB04N03H , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT .

History: 2SK3774-01S | DMN2004TK

Keywords - AP6N1R7CDT MOSFET datasheet

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