AP6N100JV MOSFET Datasheet: N-Ch, 60V, 7.5A. Full specification with pinout and replacement list

AP6N100JV Specs and Replacement

Type Designator: AP6N100JV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO251VS

AP6N100JV substitution

- MOSFET ⓘ Cross-Reference Search

AP6N100JV datasheet

..1. Size:177K ape
ap6n100jv.pdf pdf_icon

AP6N100JV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description AP6N100 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒

7.1. Size:205K ape
ap6n100h.pdf pdf_icon

AP6N100H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description G AP6N100 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to a... See More ⇒

8.1. Size:1197K cn apm
ap6n10mi.pdf pdf_icon

AP6N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP6N10MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =6A DS D R ... See More ⇒

9.1. Size:137K ape
ap6n1r7cdt.pdf pdf_icon

AP6N1R7CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP6N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the l... See More ⇒