AP6C036H MOSFET Datasheet: NP-Ch, 60V, 12A. Full specification with pinout and replacement list

AP6C036H Specs and Replacement

Type Designator: AP6C036H

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO252-4L

AP6C036H substitution

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AP6C036H datasheet

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AP6C036H Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID3 12A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S2 RDS(ON) 75m G2 Description ID3 -12A TO-252-4L Advanced Power MOSFETs from APEC ... See More ⇒

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AP6C036M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID3 6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID3 -4.2A AP6C036 series are from Advanced Power ... See More ⇒

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AP6C072M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID 5.4A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID -3.9A AP6C072 series are from Advanced Power ... See More ⇒

Detailed specifications: AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , 60N06 , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN .