All MOSFET. AP6C036H Datasheet

 

AP6C036H Datasheet and Replacement


   Type Designator: AP6C036H
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO252-4L
 

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AP6C036H Datasheet (PDF)

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AP6C036H

AP6C036HHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID3 12AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S2RDS(ON) 75mG2Description ID3 -12ATO-252-4LAdvanced Power MOSFETs from APEC

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AP6C036H

AP6C036MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD2D2 Low Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID3 6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S1SO-8RDS(ON) 72mDescription ID3 -4.2AAP6C036 series are from Advanced Power

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AP6C036H

AP6C072MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD2D2 Low Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID 5.4AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S1SO-8RDS(ON) 72mDescription ID -3.9AAP6C072 series are from Advanced Power

Datasheet: AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AO4468 , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN .

History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2

Keywords - AP6C036H MOSFET datasheet

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