All MOSFET. AP6679BGP Datasheet

 

AP6679BGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP6679BGP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 AP6679BGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6679BGP Datasheet (PDF)

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