AP6679BGP PDF and Equivalents Search

 

AP6679BGP Specs and Replacement

Type Designator: AP6679BGP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

AP6679BGP substitution

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AP6679BGP datasheet

 ..1. Size:159K  ape
ap6679bgp.pdf pdf_icon

AP6679BGP

AP6679BGP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒

 0.1. Size:95K  ape
ap6679bgp-hf.pdf pdf_icon

AP6679BGP

AP6679BGP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugg... See More ⇒

 6.1. Size:95K  ape
ap6679bgm-hf.pdf pdf_icon

AP6679BGP

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

 6.2. Size:95K  ape
ap6679bgi-hf.pdf pdf_icon

AP6679BGP

AP6679BGI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

Detailed specifications: AP6N100H, AP6N023H, AP6C036H, AP6982GN2, AP6980GN2, AP6942GMT, AP6926GMT, AP6923GMT, IRF740, AP65WN770P, AP65WN770IN, AP65WN770I, AP65WN470I, AP65WN2K3L, AP65WN2K3I, AP65WN2K3H, AP65WN1K5S

Keywords - AP6679BGP MOSFET specs

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