AP65WN770I PDF and Equivalents Search

 

AP65WN770I Specs and Replacement

Type Designator: AP65WN770I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm

Package: TO220F

AP65WN770I substitution

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AP65WN770I datasheet

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ap65wn770i.pdf pdf_icon

AP65WN770I

AP65WN770I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒

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ap65wn770in.pdf pdf_icon

AP65WN770I

AP65WN770IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on... See More ⇒

 5.1. Size:159K  ape
ap65wn770p.pdf pdf_icon

AP65WN770I

AP65WN770P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒

 8.1. Size:213K  ape
ap65wn2k3i.pdf pdf_icon

AP65WN770I

AP65WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4A G RoHS Compliant & Halogen-Free S Description AP65WN2K3 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

Detailed specifications: AP6982GN2, AP6980GN2, AP6942GMT, AP6926GMT, AP6923GMT, AP6679BGP, AP65WN770P, AP65WN770IN, IRF540N, AP65WN470I, AP65WN2K3L, AP65WN2K3I, AP65WN2K3H, AP65WN1K5S, AP65WN1K5I, AP65WN1K0I, AP65SL600DI

Keywords - AP65WN770I MOSFET specs

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