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AP65WN770I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP65WN770I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.77 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP65WN770I

 

 

AP65WN770I Datasheet (PDF)

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ap65wn770i.pdf

AP65WN770I
AP65WN770I

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 0.1. Size:211K  ape
ap65wn770in.pdf

AP65WN770I
AP65WN770I

AP65WN770INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

 5.1. Size:159K  ape
ap65wn770p.pdf

AP65WN770I
AP65WN770I

AP65WN770PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 8.1. Size:213K  ape
ap65wn2k3i.pdf

AP65WN770I
AP65WN770I

AP65WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 8.2. Size:91K  ape
ap65wn2k3l.pdf

AP65WN770I
AP65WN770I

AP65WN2K3LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 8.3. Size:174K  ape
ap65wn1k0i.pdf

AP65WN770I
AP65WN770I

AP65WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-resi

 8.4. Size:64K  ape
ap65wn1k5s.pdf

AP65WN770I
AP65WN770I

AP65WN1K5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.5. Size:59K  ape
ap65wn1k5i.pdf

AP65WN770I
AP65WN770I

AP65WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.6. Size:175K  ape
ap65wn470i.pdf

AP65WN770I
AP65WN770I

AP65WN470IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.47 Fast Switching Characteristic ID3 14AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN470 series are from the innovated design and siliconprocess technology to achieve the lowest possibl

 8.7. Size:198K  ape
ap65wn2k3h.pdf

AP65WN770I
AP65WN770I

AP65WN2K3HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.3 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andGsilicon process technology to achieve the lo

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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