All MOSFET. AP65PN2R6P Datasheet

 

AP65PN2R6P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP65PN2R6P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220

 AP65PN2R6P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP65PN2R6P Datasheet (PDF)

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ap65pn2r6p.pdf

AP65PN2R6P
AP65PN2R6P

AP65PN2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 5.1. Size:212K  ape
ap65pn2r6i.pdf

AP65PN2R6P
AP65PN2R6P

AP65PN2R6IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 5.2. Size:91K  ape
ap65pn2r6l.pdf

AP65PN2R6P
AP65PN2R6P

AP65PN2R6LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 5.3. Size:198K  ape
ap65pn2r6h.pdf

AP65PN2R6P
AP65PN2R6P

AP65PN2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andGsilicon process technology to achieve the

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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