AP65PN2R6P. Аналоги и основные параметры
Наименование производителя: AP65PN2R6P
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 56.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 25 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm
Тип корпуса: TO220
Аналог (замена) для AP65PN2R6P
- подборⓘ MOSFET транзистора по параметрам
AP65PN2R6P даташит
ap65pn2r6p.pdf
AP65PN2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low
ap65pn2r6i.pdf
AP65PN2R6I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low
ap65pn2r6l.pdf
AP65PN2R6L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low
ap65pn2r6h.pdf
AP65PN2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and G silicon process technology to achieve the
Другие IGBT... AP65SL105AFS, AP65SL099DWL, AP65SL099DR, AP65SL099DI, AP65SL099AWL, AP65SL099AS, AP65SL045AFWL, AP65SL041AWL, AON7506, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, AP60WN650I
History: AO4421 | AON3402
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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