All MOSFET. AP60WN2K3H Datasheet

 

AP60WN2K3H Datasheet and Replacement


   Type Designator: AP60WN2K3H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.37 Ohm
   Package: TO252
 

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AP60WN2K3H Datasheet (PDF)

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AP60WN2K3H

AP60WN2K3HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

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 ap60wn2k3i.pdf pdf_icon

AP60WN2K3H

AP60WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.1. Size:198K  ape
 ap60wn2k1h.pdf pdf_icon

AP60WN2K3H

AP60WN2K1HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 6.2. Size:199K  ape
 ap60wn2k1j.pdf pdf_icon

AP60WN2K3H

AP60WN2K1JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN2K1 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

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Datasheet: AP60WN650I , AP60WN4K9P , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H , AP60WN4K5I , AP60WN4K5H , AP60WN2K3I , 2N60 , AP60WN2K1J , AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN .

History: FQB9N08TM | SWB051R08ES | IRFHM8235 | SHD226412 | P2806BD | BRCS20P06DP | FDS6679Z

Keywords - AP60WN2K3H MOSFET datasheet

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