All MOSFET. AP60WN1K5J Datasheet

 

AP60WN1K5J MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP60WN1K5J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO251

 AP60WN1K5J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60WN1K5J Datasheet (PDF)

 ..1. Size:161K  ape
 ap60wn1k5j.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

 5.1. Size:196K  ape
 ap60wn1k5h.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 5.2. Size:174K  ape
 ap60wn1k5i.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.1. Size:59K  ape
 ap60wn1k2h.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 6.2. Size:211K  ape
 ap60wn1k2in.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K2INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.3. Size:59K  ape
 ap60wn1k2j.pdf

AP60WN1K5J AP60WN1K5J

AP60WN1K2JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K2 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7306QTR | 2SJ208 | AOB7S65

 

 
Back to Top