AP60WN1K5J - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP60WN1K5J
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 44 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm
Тип корпуса: TO251
Аналог (замена) для AP60WN1K5J
AP60WN1K5J Datasheet (PDF)
ap60wn1k5j.pdf

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the
ap60wn1k5h.pdf

AP60WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
ap60wn1k5i.pdf

AP60WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
ap60wn1k2h.pdf

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on
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