All MOSFET. AP60WN1K2H Datasheet

 

AP60WN1K2H Datasheet and Replacement


   Type Designator: AP60WN1K2H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

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AP60WN1K2H Datasheet (PDF)

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AP60WN1K2H

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

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AP60WN1K2H

AP60WN1K2INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 5.2. Size:59K  ape
 ap60wn1k2j.pdf pdf_icon

AP60WN1K2H

AP60WN1K2JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K2 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

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 ap60wn1k5j.pdf pdf_icon

AP60WN1K2H

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

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Datasheet: AP60WN2K1J , AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AO3400A , AP60SL650AFI , AP60SL650AFH , AP60SL600DI , AP60SL600DH , AP60SL600AJ , AP60SL600AIN , AP60SL600AI , AP60SL600AH .

History: AP60WN1K2IN | AO5600E | BUZ102AL | DMN3051L | NTMFS5C442NLT | AP60SL650AFI | BUZ101SL

Keywords - AP60WN1K2H MOSFET datasheet

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