AP60WN1K2H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP60WN1K2H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 89.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 50 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO252
Аналог (замена) для AP60WN1K2H
AP60WN1K2H Datasheet (PDF)
ap60wn1k2h.pdf

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on
ap60wn1k2in.pdf

AP60WN1K2INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
ap60wn1k2j.pdf

AP60WN1K2JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K2 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l
ap60wn1k5j.pdf

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the
Другие MOSFET... AP60WN2K1J , AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , RU6888R , AP60SL650AFI , AP60SL650AFH , AP60SL600DI , AP60SL600DH , AP60SL600AJ , AP60SL600AIN , AP60SL600AI , AP60SL600AH .
History: STP6506 | CPH3360 | 2SK702 | BRCS25N60PH
History: STP6506 | CPH3360 | 2SK702 | BRCS25N60PH



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
a933 transistor datasheet | a1633 transistor | 2sa844 | 2sc1327 | 2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent