All MOSFET. AP60SL280DI Datasheet

 

AP60SL280DI Datasheet and Replacement


   Type Designator: AP60SL280DI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 13.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F
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AP60SL280DI Datasheet (PDF)

 ..1. Size:177K  ape
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AP60SL280DI

AP60SL280DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID3,4 13.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL280D series are from Advanced Power innovated design andsilicon process technology to achieve t

 5.1. Size:178K  ape
ap60sl280ai.pdf pdf_icon

AP60SL280DI

AP60SL280AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic VDS @ Tj,max. 650VD Simple Drive Requirement RDS(ON) 0.28 RoHS Compliant & Halogen-Free ID3,4 13.5AGSDescriptionAP60SL280A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib

 5.2. Size:214K  ape
ap60sl280ain.pdf pdf_icon

AP60SL280DI

AP60SL280AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID3,4 13.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL280A series are from Advanced Power innovated design andsilicon process technology to

 8.1. Size:201K  ape
ap60sl600aj.pdf pdf_icon

AP60SL280DI

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

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History: STW29NK50Z | AP4N1R1CDT-A | CEP13N10L | 5N60A | AP60PN72RLEN

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