AP60SL150AI MOSFET. Datasheet pdf. Equivalent
Type Designator: AP60SL150AI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220F
AP60SL150AI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP60SL150AI Datasheet (PDF)
ap60sl150ai.pdf
AP60SL150AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the
ap60sl150ar.pdf
AP60SL150ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l
ap60sl150ap.pdf
AP60SL150APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l
ap60sl115ai.pdf
AP60SL115AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.115 Simple Drive Requirement ID3,4 28AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL115A series are from Advanced Power innovated designand silicon process technology to achieve th
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918