Справочник MOSFET. AP60SL150AI

 

AP60SL150AI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP60SL150AI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

AP60SL150AI Datasheet (PDF)

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 ap60sl150ai.pdf pdf_icon

AP60SL150AI

AP60SL150AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the

 4.1. Size:209K  ape
 ap60sl150ar.pdf pdf_icon

AP60SL150AI

AP60SL150ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 4.2. Size:204K  ape
 ap60sl150ap.pdf pdf_icon

AP60SL150AI

AP60SL150APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 7.1. Size:182K  ape
 ap60sl115ai.pdf pdf_icon

AP60SL150AI

AP60SL115AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.115 Simple Drive Requirement ID3,4 28AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL115A series are from Advanced Power innovated designand silicon process technology to achieve th

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Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SQM47N10-24L | PMN70XPE | BUZ354 | NTP2955 | QM3003G | LR024N | SMK0460D

 

 
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