All MOSFET. AP60N2R5J Datasheet

 

AP60N2R5J MOSFET. Datasheet pdf. Equivalent

Type Designator: AP60N2R5J

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56.8 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 27 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO251

AP60N2R5J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP60N2R5J Datasheet (PDF)

1.1. ap60n2r5j.pdf Size:199K _a-power

AP60N2R5J
AP60N2R5J

AP60N2R5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 600V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 3.5A G ▼ RoHS Compliant & Halogen-Free S Description AP60N2R5 series are from Advanced Power innovated design and G D S TO-251(J) silicon process technology to achi

2.1. ap60n2r5in.pdf Size:248K _a-power

AP60N2R5J
AP60N2R5J

AP60N2R5IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 650V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID3 3.5A G ▼ RoHS Compliant & Halogen-Free S Description AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve

 5.1. ap60n03gs.pdf Size:72K _a-power

AP60N2R5J
AP60N2R5J

AP60N03GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎLow On-Resistance D BVDSS 30V Ў Ў Ў ЎFast Switching RDS(ON) 13.5m? Ў Ў Ў ЎSimple Drive Requirement ID 55A Ў Ў Ў G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-263(S) r

5.2. ap60n03gp.pdf Size:162K _a-power

AP60N2R5J
AP60N2R5J

AP60N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 13.5mΩ ▼ Simple Drive Requirement ID 55A G ▼ RoHS Compliant & Halogen-Free S Description AP60N03 series are from Advanced Power innovated design and G silicon process technology to achieve the l

 5.3. ap60n03gh.pdf Size:61K _a-power

AP60N2R5J
AP60N2R5J

AP60N03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance D BVDSS 30V Ў Fast Switching RDS(ON) 13.5m? Ў Simple Drive Requirement ID 55A G Ў RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device de

5.4. ap60n03gj.pdf Size:61K _a-power

AP60N2R5J
AP60N2R5J

AP60N03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance D BVDSS 30V Ў Fast Switching RDS(ON) 13.5m? Ў Simple Drive Requirement ID 55A G Ў RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device de

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
Back to Top