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AP5602P Spec and Replacement


   Type Designator: AP5602P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 97 nC
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

 AP5602P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP5602P Specs

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AP5602P

AP5602P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Power innovated design AP5602 series are from Advanced Power innovated des... See More ⇒

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AP5602P

AP5600N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50V D Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP5600 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

Detailed specifications: AP60SL150AR , AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , IRFZ44N , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I .

History: PMV15UNEA

Keywords - AP5602P MOSFET specs

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