All MOSFET. AP5602P Datasheet

 

AP5602P Datasheet and Replacement


   Type Designator: AP5602P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 97 nC
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
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AP5602P Datasheet (PDF)

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AP5602P

AP5602PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP5602 series are from Advanced Power innovated des

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AP5602P

AP5600NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50VD Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP5600 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

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History: 5N60G-TN3-R | 5N65KG-TND-R

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