AP5602P Datasheet. Specs and Replacement

Type Designator: AP5602P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 97 nC

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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AP5602P datasheet

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AP5602P

AP5602P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Power innovated design AP5602 series are from Advanced Power innovated des... See More ⇒

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AP5602P

AP5600N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50V D Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP5600 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

Detailed specifications: AP60SL150AR, AP60SL150AP, AP60SL150AI, AP60SL115AI, AP60N2R5J, AP60N2R5IN, AP60AN750IN, AP60AN750I, IRFZ44N, AP55T10GR, AP55T10GP, AP55T10GI, AP55T10GH, AP55T06GI, AP50WN750P, AP50WN750I, AP50WN650I

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.