All MOSFET. AP5602P Datasheet

 

AP5602P Datasheet and Replacement


   Type Designator: AP5602P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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AP5602P Datasheet (PDF)

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AP5602P

AP5602PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP5602 series are from Advanced Power innovated des

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AP5602P

AP5600NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50VD Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP5600 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

Datasheet: AP60SL150AR , AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , IRFZ44N , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I .

History: IXTT30N50L | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | UTT100P03 | SM140R50CT1TL

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