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AP50T10GJ Spec and Replacement


   Type Designator: AP50T10GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO251

 AP50T10GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP50T10GJ Specs

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 ap50t10gj.pdf pdf_icon

AP50T10GJ

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology ... See More ⇒

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 ap50t10gh-hf ap50t10gj-hf.pdf pdf_icon

AP50T10GJ

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology ... See More ⇒

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 ap50t10gm-hf.pdf pdf_icon

AP50T10GJ

AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,... See More ⇒

 6.2. Size:58K  ape
 ap50t10gi-hf.pdf pdf_icon

AP50T10GJ

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

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Detailed specifications: AP50WN270I , AP50WN1K5P , AP50WN1K5I , AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , IRFB4115 , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P .

History: AP40P02D | STV55N06L | AP50T10GI

Keywords - AP50T10GJ MOSFET specs

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