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AP50T10GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP50T10GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 89.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 42 nC
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP50T10GJ

 

 

AP50T10GJ Datasheet (PDF)

 ..1. Size:165K  ape
ap50t10gj.pdf

AP50T10GJ
AP50T10GJ

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology

 0.1. Size:202K  ape
ap50t10gh-hf ap50t10gj-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology

 6.1. Size:94K  ape
ap50t10gm-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 6.2. Size:58K  ape
ap50t10gi-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.3. Size:201K  ape
ap50t10gh.pdf

AP50T10GJ
AP50T10GJ

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology

 6.4. Size:172K  ape
ap50t10gi.pdf

AP50T10GJ
AP50T10GJ

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 6.5. Size:167K  ape
ap50t10gs.pdf

AP50T10GJ
AP50T10GJ

AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

 6.6. Size:94K  ape
ap50t10gp-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize

 6.7. Size:97K  ape
ap50t10gh j-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast

 6.8. Size:94K  ape
ap50t10gs-hf.pdf

AP50T10GJ
AP50T10GJ

AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug

 6.9. Size:145K  ape
ap50t10gp.pdf

AP50T10GJ
AP50T10GJ

AP50T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 30m Lower Gate Charge Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovate

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