AP50SL290DH Datasheet. Specs and Replacement
Type Designator: AP50SL290DH 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO3P
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AP50SL290DH substitution
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AP50SL290DH datasheet
ap50sl290dh.pdf
AP50SL290DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500V D Low trr / Qrr RDS(ON) 0.29 Simple Drive Requirement ID3 13A G RoHS Compliant & Halogen-Free S Description AP50SL290D series are from Advanced Power innovated design and G silicon process technology to achieve the lowest possibl... See More ⇒
Detailed specifications: AP50WN1K0I, AP50WN1K0H, AP50T10GS, AP50T10GP, AP50T10GJ, AP50T10GI, AP50T10GH, AP50T10AGI, 7N65, AP50PN520R, AP4P052J, AP4P052H, AP4P016P, AP4P016I, AP4P016H, AP4P013LES, AP4P013LEP
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