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AP50SL290DH Spec and Replacement


   Type Designator: AP50SL290DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO3P

 AP50SL290DH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP50SL290DH Specs

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AP50SL290DH

AP50SL290DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500V D Low trr / Qrr RDS(ON) 0.29 Simple Drive Requirement ID3 13A G RoHS Compliant & Halogen-Free S Description AP50SL290D series are from Advanced Power innovated design and G silicon process technology to achieve the lowest possibl... See More ⇒

Detailed specifications: AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , 7N65 , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP .

History: DSU023N10N3

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