AP4P016I Datasheet. Specs and Replacement

Type Designator: AP4P016I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220F

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AP4P016I datasheet

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AP4P016I

AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib... See More ⇒

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AP4P016I

AP4P016H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description G AP4P016 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes... See More ⇒

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AP4P016I

AP4P016P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possibl... See More ⇒

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AP4P016I

AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

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Detailed specifications: AP50T10GI, AP50T10GH, AP50T10AGI, AP50SL290DH, AP50PN520R, AP4P052J, AP4P052H, AP4P016P, 2SK3878, AP4P016H, AP4P013LES, AP4P013LEP, AP4P012LEH, AP4N4R2H, AP4N3R6P, AP4N3R6H, AP4N3R2MT

Keywords - AP4P016I MOSFET specs

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