AP4P016I - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP4P016I
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 285 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP4P016I
AP4P016I Datasheet (PDF)
ap4p016i.pdf

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib
ap4p016h.pdf

AP4P016HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P016 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes
ap4p016p.pdf

AP4P016PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl
ap4p013les.pdf

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
Другие MOSFET... AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , IRFP260 , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT .
History: QM2401C1 | 3N209 | ELM529575A
History: QM2401C1 | 3N209 | ELM529575A



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