IRFI620G MOSFET Datasheet: N-Ch, 200V, 4.1A. Full specification with pinout and replacement list

IRFI620G Specs and Replacement

Type Designator: IRFI620G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

IRFI620G substitution

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IRFI620G datasheet

..1. Size:289K international rectifier
irfi620g.pdf pdf_icon

PD - 95606 IRFI620GPbF Lead-Free 7/29/04 Document Number 91146 www.vishay.com 1 IRFI620GPbF Document Number 91146 www.vishay.com 2 IRFI620GPbF Document Number 91146 www.vishay.com 3 IRFI620GPbF Document Number 91146 www.vishay.com 4 IRFI620GPbF Document Number 91146 www.vishay.com 5 IRFI620GPbF Document Number 91146 www.vishay.com 6 IRFI620GPbF Peak Diode R... See More ⇒

..2. Size:1751K vishay
irfi620g sihfi620g.pdf pdf_icon

IRFI620G, SiHFI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 14 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 7.9 Low Thermal Resistance Configuration S... See More ⇒

7.1. Size:210K 1
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