All MOSFET. IRFI620G Datasheet

 

IRFI620G Datasheet and Replacement


   Type Designator: IRFI620G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14(max) nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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IRFI620G Datasheet (PDF)

 ..1. Size:289K  international rectifier
 irfi620g.pdf pdf_icon

IRFI620G

PD - 95606IRFI620GPbF Lead-Free7/29/04Document Number: 91146 www.vishay.com1IRFI620GPbFDocument Number: 91146 www.vishay.com2IRFI620GPbFDocument Number: 91146 www.vishay.com3IRFI620GPbFDocument Number: 91146 www.vishay.com4IRFI620GPbFDocument Number: 91146 www.vishay.com5IRFI620GPbFDocument Number: 91146 www.vishay.com6IRFI620GPbFPeak Diode R

 ..2. Size:1751K  vishay
 irfi620g sihfi620g.pdf pdf_icon

IRFI620G

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S

 7.1. Size:210K  1
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IRFI620G

 8.1. Size:216K  1
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IRFI620G

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Datasheet: IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , 2N60 , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G .

History: 2SJ327

Keywords - IRFI620G MOSFET datasheet

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