IRFI620G Datasheet and Replacement
Type Designator: IRFI620G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
IRFI620G substitution
IRFI620G Datasheet (PDF)
irfi620g.pdf

PD - 95606IRFI620GPbF Lead-Free7/29/04Document Number: 91146 www.vishay.com1IRFI620GPbFDocument Number: 91146 www.vishay.com2IRFI620GPbFDocument Number: 91146 www.vishay.com3IRFI620GPbFDocument Number: 91146 www.vishay.com4IRFI620GPbFDocument Number: 91146 www.vishay.com5IRFI620GPbFDocument Number: 91146 www.vishay.com6IRFI620GPbFPeak Diode R
irfi620g sihfi620g.pdf

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S
Datasheet: IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , 10N65 , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G .
History: AON6667 | 2SJ598-Z-E1
Keywords - IRFI620G MOSFET datasheet
IRFI620G cross reference
IRFI620G equivalent finder
IRFI620G lookup
IRFI620G substitution
IRFI620G replacement
History: AON6667 | 2SJ598-Z-E1



LIST
Last Update
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet