All MOSFET. AP4N2R6AMT Datasheet

 

AP4N2R6AMT Datasheet and Replacement


   Type Designator: AP4N2R6AMT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 33.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 89 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: PMPAK5X6
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AP4N2R6AMT Datasheet (PDF)

 ..1. Size:162K  ape
 ap4n2r6amt.pdf pdf_icon

AP4N2R6AMT

AP4N2R6AMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.1. Size:111K  ape
 ap4n2r6p.pdf pdf_icon

AP4N2R6AMT

AP4N2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi

 7.2. Size:242K  ape
 ap4n2r6h.pdf pdf_icon

AP4N2R6AMT

AP4N2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated d

 7.3. Size:163K  ape
 ap4n2r6mt.pdf pdf_icon

AP4N2R6AMT

AP4N2R6MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the

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Datasheet: AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J , AP4N2R6H , 18N50 , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT , AP4610P , AP4608S .

History: AP4963GEM-HF

Keywords - AP4N2R6AMT MOSFET datasheet

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