Справочник MOSFET. AP4N2R6AMT

 

AP4N2R6AMT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4N2R6AMT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 89 nC
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP4N2R6AMT

 

 

AP4N2R6AMT Datasheet (PDF)

 ..1. Size:162K  ape
 ap4n2r6amt.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6AMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.1. Size:111K  ape
 ap4n2r6p.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi

 7.2. Size:242K  ape
 ap4n2r6h.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated d

 7.3. Size:163K  ape
 ap4n2r6mt.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the

 7.4. Size:104K  ape
 ap4n2r6s.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi

 7.5. Size:207K  ape
 ap4n2r6j.pdf

AP4N2R6AMT AP4N2R6AMT

AP4N2R6JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescription GDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced P

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 

Back to Top