AP4N2R6AMT - аналоги и даташиты транзистора

 

AP4N2R6AMT - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP4N2R6AMT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 33.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP4N2R6AMT

 

AP4N2R6AMT Datasheet (PDF)

 ..1. Size:162K  ape
 ap4n2r6amt.pdf pdf_icon

AP4N2R6AMT

AP4N2R6AMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6A series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 7.1. Size:111K  ape
 ap4n2r6p.pdf pdf_icon

AP4N2R6AMT

AP4N2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi

 7.2. Size:242K  ape
 ap4n2r6h.pdf pdf_icon

AP4N2R6AMT

AP4N2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description G AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated d

 7.3. Size:163K  ape
 ap4n2r6mt.pdf pdf_icon

AP4N2R6AMT

AP4N2R6MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150A G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6 series are from Advanced Power innovated design and silicon process technology to achieve the

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