AP3N1R7CYT Datasheet. Specs and Replacement

Type Designator: AP3N1R7CYT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00188 Ohm

Package: PDFN3.3X3.3

  📄📄 Copy 

AP3N1R7CYT substitution

- MOSFET ⓘ Cross-Reference Search

 

AP3N1R7CYT datasheet

 ..1. Size:63K  ape
ap3n1r7cyt.pdf pdf_icon

AP3N1R7CYT

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi... See More ⇒

 7.1. Size:163K  ape
ap3n1r7mt.pdf pdf_icon

AP3N1R7CYT

AP3N1R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N1R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

 8.1. Size:68K  1
ap3n1r8mt.pdf pdf_icon

AP3N1R7CYT

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the ... See More ⇒

 8.2. Size:205K  ape
ap3n1r8p.pdf pdf_icon

AP3N1R7CYT

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated ... See More ⇒

Detailed specifications: AP4024GEMT, AP4024EYT, AP4024EJB, AP4024EH, AP3R604GMT-L, AP3R303GMT-L, AP3R303GMT, AP3P9R0I, IRF1405, AP3P2R2CDT, AP3NR68CDT, AP2604CDT, AP3P010YT, AP3N018EYT, AP3C030YT, AP3800YT, AP3700YT

Keywords - AP3N1R7CYT MOSFET specs

 AP3N1R7CYT cross reference

 AP3N1R7CYT equivalent finder

 AP3N1R7CYT pdf lookup

 AP3N1R7CYT substitution

 AP3N1R7CYT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs