AP3N1R7CYT - аналоги и даташиты транзистора

 

AP3N1R7CYT - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP3N1R7CYT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.12 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00188 Ohm
   Тип корпуса: PDFN3.3X3.3

 Аналог (замена) для AP3N1R7CYT

 

AP3N1R7CYT Datasheet (PDF)

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 ap3n1r7cyt.pdf pdf_icon

AP3N1R7CYT

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

 7.1. Size:163K  ape
 ap3n1r7mt.pdf pdf_icon

AP3N1R7CYT

AP3N1R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N1R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 8.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N1R7CYT

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 8.2. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N1R7CYT

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

ПОКАЗАТЬ ЕЩЁ

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