AP2N3R7LYT Spec and Replacement
Type Designator: AP2N3R7LYT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.13 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 23.4 A
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: PMPAK3X3
AP2N3R7LYT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2N3R7LYT Specs
ap2n3r7lyt.pdf
AP2N3R7LYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4A G D S D D Description D AP2N3R7L series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi... See More ⇒
ap2n30mi.pdf
AP2N30MI 300V N-Channel Enhancement Mode MOSFET Description The AP2N30MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒
Detailed specifications: AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , EMB04N03H , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT .
Keywords - AP2N3R7LYT MOSFET specs
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