All MOSFET. AP2N3R7LYT Datasheet

 

AP2N3R7LYT Datasheet and Replacement


   Type Designator: AP2N3R7LYT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 23.4 A
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: PMPAK3X3
 

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AP2N3R7LYT Datasheet (PDF)

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AP2N3R7LYT

AP2N3R7LYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4AGDSDDDescriptionDAP2N3R7L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possi

Datasheet: AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , 2SK3918 , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT .

History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ

Keywords - AP2N3R7LYT MOSFET datasheet

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