AP2N3R7LYT Datasheet. Specs and Replacement

Type Designator: AP2N3R7LYT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 23.4 A

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: PMPAK3X3

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AP2N3R7LYT datasheet

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AP2N3R7LYT

AP2N3R7LYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4A G D S D D Description D AP2N3R7L series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi... See More ⇒

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AP2N3R7LYT

AP2N30MI 300V N-Channel Enhancement Mode MOSFET Description The AP2N30MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒

Detailed specifications: AP3NR68CDT, AP2604CDT, AP3P010YT, AP3N018EYT, AP3C030YT, AP3800YT, AP3700YT, AP2P9R0LYT, EMB04N03H, AP2609GYT, AP15TP1R0YT, AP10TN028YT, AP0903GYT, AP3P7R0EMT, AP3P3R0MT, AP3P010AMT, AP3NR85CMT

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