All MOSFET. AP3N7R2MT Datasheet

 

AP3N7R2MT Datasheet and Replacement


   Type Designator: AP3N7R2MT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: PMPAK5X6
 

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AP3N7R2MT Datasheet (PDF)

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AP3N7R2MT

AP3N7R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 7.2m Ultra Low On-resistance ID 47AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N7R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

Datasheet: AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , IRFZ44N , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT , AP3N1R7MT , AP3N1R0MT .

History: NVD5803N | 2SK1835 | WSC15N10

Keywords - AP3N7R2MT MOSFET datasheet

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