AP3N7R2MT Specs and Replacement
Type Designator: AP3N7R2MT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: PMPAK5X6
AP3N7R2MT substitution
- MOSFET ⓘ Cross-Reference Search
AP3N7R2MT datasheet
ap3n7r2mt.pdf
AP3N7R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 7.2m Ultra Low On-resistance ID 47A G RoHS Compliant & Halogen-Free D S D D Description D AP3N7R2 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒
Detailed specifications: AP2609GYT, AP15TP1R0YT, AP10TN028YT, AP0903GYT, AP3P7R0EMT, AP3P3R0MT, AP3P010AMT, AP3NR85CMT, IRFZ44N, AP3N3R3MT, AP3N2R8MT, AP3N2R4MT, AP3N2R2MT, AP3N1R8MT-L, AP3N1R8MT, AP3N1R7MT, AP3N1R0MT
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPD60R3K4CE
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